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LMN400E01-7 データシート(PDF) 1 Page - Diodes Incorporated |
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LMN400E01-7 データシート(HTML) 1 Page - Diodes Incorporated |
1 / 10 page DS30750 Rev. 4 - 2 1 of 10 LMN400E01 www.diodes.com © Diodes Incorporated Characteristic Symbol Value Unit Power Dissipation (Note 3) Pd 200 mW Power Derating Factor above 37.5 °C Pder 1.6 mW/°C Output Current Iout 400 mA General Description @ TA = 25 °C unless otherwise specified D_Q2 DDTB122LU R2 220 S B_Q1 1 2 3 4 5 6 E NMOS G R1 10K B G_Q2 Q1 PNP Q2 DMN601TK C_Q1 S_Q2 D C E_Q1 LMN400E01 400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET Features • LMN400E01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on input voltage and can support continuous maximum current of 400 mA. It also contains an ESD protected discrete N-MOSFET that can be used as control. The component can be used as a part of a circuit or as a stand alone discrete device. Thermal Characteristics Fig. 1: SOT-363 • Voltage Controlled Small Signal Switch • N-MOSFET with ESD Gate Protection • Surface Mount Package • Ideally Suited for Automated Assembly Processes • Lead Free By Design/ROHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT-363 • Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 • Moisture sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL- STD -202, Method 208 • Marking & Type Code Information: See Last Page • Ordering Information: See Last Page • Weight: 0.016 grams (approximate) Fig 2 : Schematic and Pin Configuration Sub-Component P/N Reference Device Type R1(NOM) R2(NOM) Figure DDTB122LU_DIE Q1 PNP Transistor 10K 220 2 DMN601TK_DIE (ESD Protected) Q2 N-MOSFET 2 Maximum Ratings, Total Device Characteristic Symbol Value Unit Junction Operation and Storage Temperature Range Tj, Tstg -55 to +150 °C Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of PNP transistor) RθJA 625 °C/W Notes: 1. No purposefully added lead. 2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 1 2 3 4 5 6 |
同様の部品番号 - LMN400E01-7 |
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同様の説明 - LMN400E01-7 |
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