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LMN400E01-7 データシート(PDF) 1 Page - Diodes Incorporated

部品番号 LMN400E01-7
部品情報  400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET
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メーカー  DIODES [Diodes Incorporated]
ホームページ  http://www.diodes.com
Logo DIODES - Diodes Incorporated

LMN400E01-7 データシート(HTML) 1 Page - Diodes Incorporated

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DS30750 Rev. 4 - 2
1 of 10
LMN400E01
www.diodes.com
© Diodes Incorporated
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 3)
Pd
200
mW
Power Derating Factor above 37.5
°C
Pder
1.6
mW/°C
Output Current
Iout
400
mA
General Description
@ TA = 25
°C unless otherwise specified
D_Q2
DDTB122LU
R2
220
S
B_Q1
1
2
3
4
5
6
E
NMOS
G
R1
10K
B
G_Q2
Q1
PNP
Q2
DMN601TK
C_Q1
S_Q2
D
C
E_Q1
LMN400E01
400 mA LOAD SWITCH FEATURING PRE-BIASED PNP
TRANSISTOR AND ESD PROTECTED N-MOSFET
Features
LMN400E01 is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators etc. particularly at a point of
load. It features a discrete pass transistor with stable
VCE(SAT) which does not depend on input voltage and can
support continuous maximum current of 400 mA. It also
contains an ESD protected discrete N-MOSFET that can be
used as control. The component can be used as a part of a
circuit or as a stand alone discrete device.
Thermal Characteristics
Fig. 1: SOT-363
Voltage Controlled Small Signal Switch
N-MOSFET with ESD Gate Protection
Surface Mount Package
Ideally Suited for Automated Assembly Processes
Lead Free By Design/ROHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. "Green Molding" Compound.
UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL- STD -202, Method 208
Marking & Type Code Information: See Last Page
Ordering Information: See Last Page
Weight: 0.016 grams (approximate)
Fig 2 : Schematic and Pin Configuration
Sub-Component P/N
Reference
Device Type
R1(NOM)
R2(NOM)
Figure
DDTB122LU_DIE
Q1
PNP Transistor
10K
220
2
DMN601TK_DIE (ESD Protected)
Q2
N-MOSFET
2
Maximum Ratings, Total Device
Characteristic
Symbol
Value
Unit
Junction Operation and Storage Temperature Range
Tj, Tstg
-55 to +150
°C
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of PNP transistor)
RθJA
625
°C/W
Notes:
1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
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