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データシートサーチシステム |
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データシートサーチシステム |
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2PD602A データシート(PDF) 3 Page - NXP Semiconductors |
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2PD602A データシート(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  1999 Apr 23 3 Philips Semiconductors Product specification NPN general purpose transistor 2PD602A THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =60V − 10 nA IE = 0; VCB =60V; Tj = 150 °C − 5 µA IEBO emitter cut-off current IC = 0; VEB =4V − 10 nA hFE DC current gain IC = 150 mA; VCE = 10 V; note 1 2PD602AQ 85 170 2PD602AR 120 240 2PD602AS 170 340 DC current gain IC = 500 mA; VCE = 10 V; note 1 40 − VCEsat collector-emitter saturation voltage IC = 300 mA; IB = 30 mA; note 1 − 600 mV Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz − 15 pF fT transition frequency IC = 50 mA; VCE =10V; f = 100 MHz; note 1 2PD602AQ 140 − MHz 2PD602AR 160 − MHz 2PD602AS 180 − MHz |
同様の部品番号 - 2PD602A |
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同様の説明 - 2PD602A |
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