Philips Semiconductors

Product specification

74ABT125

Quad buffer (3-State)

1998 Jan 16

3

LOGIC SYMBOL (IEEE/IEC)

1

3

2

EN

4

6

5

10

8

9

13

11

12

1

SA00027

FUNCTION TABLE

INPUTS

OUTPUTS

OEn

An

Yn

L

L

L

L

H

H

H

X

Z

H = High voltage level

L

= Low voltage level

X = Don’t care

Z = High impedance ”off” state

SYMBOL

PARAMETER

CONDITIONS

RATING

UNIT

DC supply voltage

–0.5 to +7.0

V

DC input diode current

–18

mA

–1.2 to +7.0

V

DC output diode current

–50

mA

output in Off or High state

–0.5 to +5.5

V

DC output current

output in Low state

128

mA

Storage temperature range

–65 to 150

°C

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the

device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to

absolute-maximum-rated conditions for extended periods may affect device reliability.

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction

temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150

°C.

3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

RECOMMENDED OPERATING CONDITIONS

SYMBOL

PARAMETER

LIMITS

UNIT

SYMBOL

PARAMETER

MIN

MAX

UNIT

DC supply voltage

4.5

5.5

V

Input voltage

0

V

High-level input voltage

2.0

V

Low-level input voltage

0.8

V

High-level output current

–32

mA

Low-level output current

64

mA

∆t/∆v

Input transition rise or fall rate

0

10

ns/V

Operating free-air temperature range

–40

+85

°C