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GS880E32T-100I データシート(PDF) 10 Page - GSI Technology |
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GS880E32T-100I データシート(HTML) 10 Page - GSI Technology |
10 / 25 page Rev: 1.11 11/2000 10/25 © 2000, Giga Semiconductor, Inc. Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS880E18/32/36T-11/11.5/100/80/66 First Write First Read Burst Write Burst Read Deselect R W CR CW X X W R R W R X X X CR R CW CR CR W CW W CW Simplified State Diagram with G Notes: 1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G. 2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing through a Deselect cycle. Dummy Read cycles increment the address counter just like normal Read cycles. 3. Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet Data Input Set Up Time. |
同様の部品番号 - GS880E32T-100I |
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同様の説明 - GS880E32T-100I |
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