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GS71208TP-8 データシート(PDF) 3 Page - GSI Technology

部品番号 GS71208TP-8
部品情報  128K x 8 1Mb Asynchronous SRAM
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メーカー  GSI [GSI Technology]
ホームページ  http://www.gsitechnology.com
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Rev: 1.03 10/2001
3/11
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS71208TP
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Note:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
0.5 to +4.6
V
Input Voltage
VIN
0.5 to VDD +0.5
(
≤ 4.6 V max.)
V
Output Voltage
VOUT
0.5 to VDD +0.5
(
≤ 4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
TSTG
55 to 150
oC
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -8
VDD
3.135
3.3
3.6
V
Input High Voltage
VIH
2.0
VDD +0.3
V
Input Low Voltage
VIL
0.3
0.8
V
Ambient Temperature,
Commercial Range
TAc
0
70
oC
Ambient Temperature,
Industrial Range
TAI
40
85
oC
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
CIN
VIN = 0 V
5
pF
Output Capacitance
COUT
VOUT = 0 V
7
pF


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