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GS74104J-12 データシート(PDF) 1 Page - GSI Technology |
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GS74104J-12 データシート(HTML) 1 Page - GSI Technology |
1 / 12 page Rev: 1.07 1/2001 1/12 © 1999, Giga Semiconductor, Inc. Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS74104TP/J 1M x 4 4Mb Asynchronous SRAM 8, 10, 12, 15 ns 3.3 V VDD Center VDD and VSS SOJ, TSOP Commercial Temp Industrial Temp Features • Fast access time: 8, 10, 12, 15 ns • CMOS low power operation: 150/125/110/90 mA at minimum cycle time. • Single 3.3 V ± 0.3 V power supply • All inputs and outputs are TTL-compatible • Fully static operation • Industrial Temperature Option: –40° to 85°C • Package line up J: 400 mil, 32-pin SOJ package TP: 400 mil, 44-pin TSOP Type II package Description The GS74104 is a high speed CMOS Static RAM organized as 1,048,576 words by 4 bits. Static design eliminates the need for external clocks or timing strobes. The GS operates on a single 3.3 V power supply and all inputs and outputs are TTL-com- patible. The GS74104 is available in 400 mil SOJ and 400 mil TSOP Type-II packages. Pin Descriptions SOJ 1M x 4-Pin Configuraton TSOP-II 1M x 4-Pin Configuration Symbol Description A0–A19 Address input DQ1–DQ4 Data input/output CE Chip enable input WE Write enable input OE Output enable input VDD +3.3 V power supply VSS Ground NC No connect 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A4 A3 A2 A1 A0 CE DQ1 VDD VSS DQ2 WE A19 A18 A17 A16 A15 A5 A6 A7 A8 A9 OE DQ4 VSS VDD DQ3 A10 A11 A12 A13 A14 NC 32-pin 400 mil SOJ 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 NC A4 A3 A2 A1 A0 CE DQ1 VDD VSS DQ2 WE A19 A18 A17 A16 NC A5 A6 A7 A8 A9 OE DQ4 VSS VDD DQ3 A10 A11 A12 A13 A14 44-pin 400 mil TSOP II 19 20 A15 NC 26 25 NC NC 21 22 NC NC 24 23 NC NC 1 2 NC NC 44 43 NC NC |
同様の部品番号 - GS74104J-12 |
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同様の説明 - GS74104J-12 |
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