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74AHCT1G00 データシート(PDF) 5 Page - NXP Semiconductors |
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74AHCT1G00 データシート(HTML) 5 Page - NXP Semiconductors |
5 / 12 page 2002 May 27 5 Philips Semiconductors Product specification 2-input NAND gate 74AHC1G00; 74AHCT1G00 RECOMMENDED OPERATING CONDITIONS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). Note 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. SYMBOL PARAMETER CONDITIONS 74AHC1G 74AHCT1G UNIT MIN. TYP. MAX. MIN. TYP. MAX. VCC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V VI input voltage 0 − 5.5 0 − 5.5 V VO output voltage 0 − VCC 0 − VCC V Tamb operating ambient temperature see DC and AC characteristics per device −40 +25 +125 −40 +25 +125 °C tr,tf ( ∆t/∆f) input rise and fall times VCC = 3.3 ±0.3 V −− 100 −−− ns/V VCC =5 ±0.5 V −− 20 −− 20 ns/V SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.5 +7.0 V VI input voltage −0.5 +7.0 V IIK input diode current VI < −0.5 V −−20 mA IOK output diode current VO < −0.5 V or VO >VCC + 0.5 V; note 1 −±20 mA IO output source or sink current −0.5V<VO <VCC + 0.5 V −±25 mA ICC VCC or GND current −±75 mA Tstg storage temperature −65 +150 °C PD power dissipation per package for temperature range from −40 to +125 °C − 250 mW |
同様の部品番号 - 74AHCT1G00 |
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同様の説明 - 74AHCT1G00 |
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