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IRF3808S データシート(PDF) 1 Page - International Rectifier |
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IRF3808S データシート(HTML) 1 Page - International Rectifier |
1 / 11 page IRF3808S IRF3808L HEXFET® Power MOSFET Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest pro- cessing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low R θJC, fast switch- ing speed and improved repetitive avalanche rating. This combina- tion makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications. S D G Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 106 V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 75 V A IDM Pulsed Drain Current Q 550 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy R 430 mJ IAR Avalanche Current Q 82 A EAR Repetitive Avalanche Energy W See Fig.12a, 12b, 15, 16 mJ dv/dt Peak Diode Recovery dv/dt S 5.5 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 °C/W RθJA Junction-to-Ambient (PCB Mounted, Steady State)** ––– 40 Thermal Resistance VDSS = 75V RDS(on) = 0.007Ω ID = 106A V Description 03/08/02 www.irf.com 1 q Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv/dt Rating q 175°C Operating Temperature q Fast Switching q Repetitive Avalanche Allowed up to Tjmax Benefits Typical Applications q Integrated Starter Alternator q 42 Volts Automotive Electrical Systems AUTOMOTIVE MOSFET PD - 94338A HEXFET(R) is a registered trademark of International Rectifier. D2Pak IRF3808S TO-262 IRF3808L |
同様の部品番号 - IRF3808S |
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同様の説明 - IRF3808S |
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