1998 Aug 31

2

Philips Semiconductors

Product specification

Band-switching diode

BA591

FEATURES

• Very small plastic SMD package

• Low diode capacitance:

max. 1.05 pF

• Low diode forward resistance:

max. 0.7

Ω

• Small inductance.

APPLICATIONS

• Low loss band-switching in VHF

television tuners

• Surface mount band-switching

circuits.

DESCRIPTION

The BA591 is a planar, high

performance band-switching diode in

the very small SOD323 SMD plastic

package.

PINNING

PIN

DESCRIPTION

1

cathode

2

anode

Fig.1 Simplified outline (SOD323) and symbol.

Marking code: A1.

The marking band indicates the cathode.

handbook, halfpage

12

MAM406

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

ELECTRICAL CHARACTERISTICS

Note

1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

35

V

continuous forward current

−

100

mA

total power dissipation

−

500

mW

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

forward voltage

−

1V

reverse current

−

20

nA

diode capacitance

f = 1 MHz; note 1; see Fig.2

0.8

1.05

pF

0.65

0.9

pF

diode forward resistance

f = 100 MHz; note 1; see Fig.3

0.45

0.7

Ω

0.36

0.5

Ω

reverse resistance

100

−

k

Ω

series inductance

2

−

nH