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LM3743MM-300 データシート(PDF) 4 Page - National Semiconductor (TI) |
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LM3743MM-300 データシート(HTML) 4 Page - National Semiconductor (TI) |
4 / 23 page Electrical Characteristics V CC = 3.3V, COMP/EN floating unless otherwise indicated in the conditions column. Limits in standard type are for T J = 25˚C only; limits in boldface type apply over the junction temperature (TJ) range of -40˚C to +125˚C. Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values represent the most likely parametric norm at T J = 25˚C, and are provided for reference purposes only. (Continued) Symbol Parameter Conditions Min Typ Max Units V RAMP PWM Ramp Amplitude 1.0 V LOGIC INPUTS AND OUTPUTS V COMP/EN-HI COMP/EN pin logic high trip-point 0.65 0.9 V V COMP/EN-LO COMP/EN pin logic low trip-point 0.1 0.45 V HICCUP MODE N LSCYCLES Low-side sensing cycles before hiccup mode 15 Cycles N LSRESET Low-side sensing cycles reset without activating current limit 32 Cycles V UVP Under Voltage Protection comparator threshold 400 mV t GLICH-UVP Under Voltage Protection fault time before hiccup mode 7µs t HICCUP Hiccup timeout 5.5 ms t SS Soft-start time coming out of hiccup mode 3.6 ms THERMAL RESISTANCE θ JA Junction to Ambient Thermal Resistance 235 ˚C/W Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device operates correctly. Operating Ratings do not imply guaranteed performance limits. Note 2: Practical lower limit of VCC depends on selection of the external MOSFET. See the MOSFET GATE DRIVERS section under Application Information for further details. Note 3: ESD using the human body model which is a 100 pF capacitor discharged through a 1.5 k Ω resistor into each pin. Test method is per JESD22–A114. www.national.com 4 |
同様の部品番号 - LM3743MM-300 |
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同様の説明 - LM3743MM-300 |
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