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BD244 データシート(PDF) 2 Page - Bourns Electronic Solutions |
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BD244 データシート(HTML) 2 Page - Bourns Electronic Solutions |
2 / 5 page BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS 2 PRODU CT INFORMA TION JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = -30 mA (see Note 5) IB = 0 BD244 BD244A BD244B BD244C -45 -60 -80 -100 V ICES Collector-emitter cut-off current VCE = -55 V VCE = -70 V VCE = -90 V VCE = -115 V VBE =0 VBE =0 VBE =0 VBE =0 BD244 BD244A BD244B BD244C -0.4 -0.4 -0.4 -0.4 mA ICEO Collector cut-off current VCE = -30 V VCE = -60 V IB =0 IB =0 BD244/244A BD244B/244C -0.7 -0.7 mA IEBO Emitter cut-off current VEB = -5 V IC =0 -1 mA hFE Forward current transfer ratio VCE = -4 V VCE = -4 V IC =-0.3 A IC = -3 A (see Notes 5 and 6) 30 15 VCE(sat) Collector-emitter saturation voltage IB = -1 A IC = -6 A (see Notes 5 and 6) -1.5 V VBE Base-emitter voltage VCE = -4 V IC = -6 A (see Notes 5 and 6) -2 V hfe Small signal forward current transfer ratio VCE = -10 V IC =-0.5 A f = 1 kHz 20 |h fe| Small signal forward current transfer ratio VCE = -10 V IC =-0.5 A f = 1 MHz 3 thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.92 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn-on time IC = -1 A VBE(off) = 3.7 V IB(on) = -0.1 A RL = 20 Ω IB(off) = 0.1 A tp = 20 µs, dc ≤ 2% 0.3 µs toff Turn-off time 1µs |
同様の部品番号 - BD244 |
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同様の説明 - BD244 |
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