BD245, BD245A, BD245B, BD245C

NPN SILICON POWER TRANSISTORS

P R O D UCT

INFORMA TION

1

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BD246 Series

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

RATING

SYMBOL

VALUE

UNIT

BD245

BD245A

BD245B

BD245C

55

70

90

115

V

BD245

BD245A

BD245B

BD245C

45

60

80

100

V

Emitter-base voltage

5V

Continuous collector current

10

A

Peak collector current (see Note 1)

15

A

Continuous base current

3A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

80

W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

3W

Unclamped inductive load energy (see Note 4)

2

62.5

mJ

Operating junction temperature range

-65 to +150

°C

Storage temperature range

-65 to +150

°C

Lead temperature 3.2 mm from case for 10 seconds

250

°C

SOT-93 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

B

C

E

1

2

3