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BD246C データシート(PDF) 1 Page - Bourns Electronic Solutions

部品番号 BD246C
部品情報  PNP SILICON POWER TRANSISTORS
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メーカー  BOURNS [Bourns Electronic Solutions]
ホームページ  http://www.bourns.com
Logo BOURNS - Bourns Electronic Solutions

BD246C データシート(HTML) 1 Page - Bourns Electronic Solutions

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BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
P R O D UCT
INFORMA TION
1
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with the
BD245 Series
80 W at 25°C Case Temperature
10 A Continuous Collector Current
15 A Peak Collector Current
Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (RBE = 100 Ω)
BD246
BD246A
BD246B
BD246C
VCER
-55
-70
-90
-115
V
Collector-emitter voltage (IC = -30 mA)
BD246
BD246A
BD246B
BD246C
VCEO
-45
-60
-80
-100
V
Emitter-base voltage
VEBO
-5
V
Continuous collector current
IC
-10
A
Peak collector current (see Note 1)
ICM
-15
A
Continuous base current
IB
-3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
80
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3W
Unclamped inductive load energy (see Note 4)
½LIC
2
62.5
mJ
Operating junction temperature range
Tj
-65 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
TL
250
°C
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
B
C
E
1
2
3


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