BU426 datasheet(2/6 Pages) BOURNS

部品番号	BU426

部品情報	NPN SILICON POWER TRANSISTORS

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BU426, BU426A

NPN SILICON POWER TRANSISTORS

2

PRODU CT

INFORMA TION

AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VCEO(sus)

Collector-emitter

sustaining voltage

IC = 100 mA

L = 25 mH

(see Note 2)

BU426

BU426A

375

400

V

ICES

Collector-emitter

cut-off current

VCE = 800 V

VCE = 900 V

VCE = 800 V

VCE = 900 V

VBE =0

TC = 125°C

BU426

BU426A

BU426

BU426A

1

2

mA

IEBO

Emitter cut-off

current

VEB = 10 V

IC =0

10

mA

hFE

Forward current

transfer ratio

VCE =

5 V

IC = 0.6 A

(see Notes 3 and 4)

30

60

VCE(sat)

Collector-emitter

saturation voltage

IB =

0.5 A

IB =

1.25 A

IC = 2.5A

IC =

4A

(see Notes 3 and 4)

1.5

3

V

VBE(sat)

Base-emitter

saturation voltage

IB =

0.5 A

IB =

1.25 A

IC = 2.5A

IC =

4A

(see Notes 3 and 4)

1.4

1.6

V

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

1.1

°C/W

resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS †

MIN

TYP

MAX

UNIT

ton

Turn on time

IC = 2.5 A

VCC = 250 V

IB(on) = 0.5 A

(see Figures 1 and 2)

IB(off) = -1 A

0.3

0.6

µs

ts

Storage time

23.5

µs

tf

Fall time

0.15

µs

tf

Fall time

IC = 2.5 A

VCC = 250 V

IB(on) = 0.5 A

TC = 95°C

IB(off) = -1 A

0.2

0.75

µs

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