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ADF4156BCPZ データシート(PDF) 5 Page - Analog Devices |
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ADF4156BCPZ データシート(HTML) 5 Page - Analog Devices |
5 / 24 page ADF4156 Rev. 0 | Page 5 of 24 ABSOLUTE MAXIMUM RATINGS TA = 25°C, GND = AGND = DGND = 0 V, VDD = AVDD = DVDD, unless otherwise noted. Table 3. Parameter Rating VDD to GND −0.3 V to +4 V VDD to VDD −0.3 V to +0.3 V VP to GND −0.3 V to +5.8 V VP to VDD −0.3 V to +5.8 V Digital I/O Voltage to GND −0.3 V to VDD + 0.3 V Analog I/O Voltage to GND −0.3 V to VDD + 0.3 V REFIN, RFIN to GND −0.3 V to VDD + 0.3 V Operating Temperature Range Industrial (B Version) −40°C to +85°C Storage Temperature Range −65°C to +125°C Maximum Junction Temperature 150°C Reflow Soldering Peak Temperature 260°C Time at Peak Temperature 40 sec Maximum Junction Temperature 150°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. This device is a high performance RF integrated circuit with an ESD rating of <2 kV, and it is ESD sensitive. Proper precautions should be taken for handling and assembly. THERMAL IMPEDANCE Table 4. Thermal Impedance Package Type θJA Unit TSSOP 112 °C/W LFCSP_VQ (Paddle Soldered) 30.4 °C/W ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. |
同様の部品番号 - ADF4156BCPZ |
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同様の説明 - ADF4156BCPZ |
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