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BCW69 データシート(PDF) 3 Page - NXP Semiconductors |
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BCW69 データシート(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 19 3 Philips Semiconductors Product specification PNP general purpose transistors BCW69; BCW70 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −20 V −−−100 nA IE = 0; VCB = −20 V; Tj = 100 °C −−−10 µA IEBO emitter cut-off current IC = 0; VEB = −5V −−−100 nA hFE DC current gain IC = −10 µA; VCE = −5V BCW69 − 90 − BCW70 − 150 − DC current gain IC = −2 mA; VCE = −5V BCW69 120 − 260 BCW70 215 − 500 VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA −−80 −300 mV IC = −50 mA; IB = −2.5 mA; note 1 −−150 − mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA −−720 − mV IC = −50 mA; IB = −2.5 mA; note 1 −−810 − mV VBE base-emitter voltage IC = −2 mA; VCE = −5V −600 −−750 mV Cc collector capacitance IE =Ie = 0; VCB = −10 V; f = 1 MHz − 4.5 − pF fT transition frequency IC = −10 mA; VCE = −5V; f = 100 MHz 100 −− MHz F noise figure IC = −200 µA; VCE = −5V; RS =2kΩ; f = 1 kHz; B = 200 Hz −− 10 dB |
同様の部品番号 - BCW69 |
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同様の説明 - BCW69 |
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