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BD132 データシート(PDF) 2 Page - NXP Semiconductors |
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BD132 データシート(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 Mar 04 2 Philips Semiconductors Product specification PNP power transistor BD132 FEATURES • High current (max. 3 A) • Low voltage (max. 45 V). APPLICATIONS • General purpose power applications. DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complement: BD131. PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base Fig.1 Simplified outline (TO-126; SOT32) and symbol. handbook, halfpage MAM272 12 3 Top view 1 2 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−45 V VCEO collector-emitter voltage open base −−45 V ICM peak collector current −−6A Ptot total power dissipation Tmb ≤ 60 °C − 15 W hFE DC current gain IC = −0.5 A; VCE = −12 V 40 − fT transition frequency IC = −0.25 A; VCE = −5 V; f = 100 MHz 60 − MHz |
同様の部品番号 - BD132 |
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同様の説明 - BD132 |
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