BD139-10 datasheet(3/8 Pages) PHILIPS

部品番号	BD139-10

部品情報	NPN power transistors

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メーカー	PHILIPS [NXP Semiconductors]

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3 / 8 page

1999 Apr 12

3

Philips Semiconductors

Product speciﬁcation

NPN power transistors

BD135; BD137; BD139

THERMAL CHARACTERISTICS

Note

1. Refer to TO-126; SOT32 standard mounting conditions.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

100

K/W

Rth j-mb

thermal resistance from junction to mounting base

10

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =30V

−−

100

nA

IE = 0; VCB =30V; Tj = 125 °C

−−

10

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

nA

hFE

DC current gain

VCE = 2 V; (see Fig.2)

IC = 5 mA

40

−−

IC = 150 mA

63

−

250

IC = 500 mA

25

−−

DC current gain

IC = 150 mA; VCE =2V;

(see Fig.2)

BD135-10; BD137-10; BD139-10

63

−

160

BD135-16; BD137-16; BD139-16

100

−

250

VCEsat

collector-emitter saturation voltage

IC = 500 mA; IB =50mA

−−

0.5

V

VBE

base-emitter voltage

IC = 500 mA; VCE =2V

−−

1V

fT

transition frequency

IC = 50 mA; VCE =5V;

f = 100 MHz

−

190

−

MHz

DC current gain ratio of the

complementary pairs

I

C = 150 mA; VCE =2V

−

1.3

1.6

h

FE1

h

FE2

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