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BF904 データシート(PDF) 7 Page - NXP Semiconductors |
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BF904 データシート(HTML) 7 Page - NXP Semiconductors |
7 / 16 page 1999 May 17 7 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R Fig.12 Drain current as a function of gate 1 supply voltage (= VGG); typical values; see Fig.20. VDS = 5 V; VG2-S =4V. RG1 = 120 kΩ (connected to VGG); Tj =25 °C. handbook, halfpage 0 12 8 4 0 15 MLD275 23 4 I D (mA) V (V) GG Fig.13 Drain current as a function of gate 1 (= VGG) and drain supply voltage; typical values; see Fig.20. VG2-S =4V. RG1 connected to VGG; Tj =25 °C. handbook, halfpage 0 20 10 15 5 0 24 8 MLD274 6 V = V (V) GG DS I D (mA) R = 47 k Ω G1 68 k Ω 82 k Ω 100 k Ω 120 k Ω 150 k Ω 180 k Ω 220 k Ω VDS = 5 V; Tj =25 °C. RG1 = 120 kΩ (connected to VGG). Fig.14 Drain current as a function of gate 2 voltage; typical values; see Fig.20. handbook, halfpage 024 6 12 0 MLD276 8 4 I D (mA) 4.5 V 4 V 3.5 V 3 V V (V) G2 S V = 5 V GG Fig.15 Gate 1 current as a function of gate 2 voltage; typical values; see Fig.20. VDS = 5 V; Tj =25 °C. RG1 = 120 kΩ (connected to VGG). handbook, halfpage 02 46 40 30 10 0 20 MLB945 I G1 ( µA) V (V) G2 S 4.5 V 4 V 3.5 V 3 V V = 5 V GG |
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同様の説明 - BF904 |
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