BF908WR datasheet(3/7 Pages) PHILIPS

部品番号	BF908WR

部品情報	N-channel dual-gate MOS-FET

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メーカー	PHILIPS [NXP Semiconductors]

ホームページ	http://www.nxp.com

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3 / 7 page

1995 Apr 25

3

Philips Semiconductors

Preliminary speciﬁcation

N-channel dual-gate MOS-FET

BF908WR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on a printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−

12

V

ID

drain current

−

40

mA

IG1

gate 1 current

−±10

mA

IG2

gate 2 current

−±10

mA

Ptot

total power dissipation

up to Tamb =45 °C; see Fig.2;

note 1

−

300

mW

Tstg

storage temperature

−65

+150

°C

Tj

operating junction temperature

−

+150

°C

Fig.2 Power derating curve.

handbook, halfpage

0

50

100

200

0

MLD154

150

400

200

300

100

Ptot

(mW)

T

( C)

amb

o

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