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TSDF1220F データシート(PDF) 3 Page - Vishay Siliconix |
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TSDF1220F データシート(HTML) 3 Page - Vishay Siliconix |
3 / 4 page TSDF1220F Document Number 85106 Rev. 1.3, 02-May-05 Vishay Semiconductors www.vishay.com 3 Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Package Dimensions in mm Parameter Test condition Symbol Min Typ. Max Unit Transition frequency VCE = 5 V, IC = 20 mA, f = 1 GHz fT 12 GHz Collector-base capacitance VCB = 1 V, f = 1 MHz Ccb 0.3 pF Collector-emitter capacitance VCE = 1 V, f = 1 MHz Cce 0.35 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.5 pF Noise figure VCE = 5 V, IC = 3 mA, ZS = ZSopt, ZL = 50 Ω, f = 2 GHz F1.2 dB Power gain VCE = 5 V, IC = 20 mA, ZS = ZSopt, ZL = 50 Ω, f = 2 GHz Gpe 13.5 dB Transducer gain VCE = 5 V, IC = 20 mA, f = 2 GHz, ZO = 50 Ω |S21se| 2 12 dB Third order intercept point at output VCE = 5 V, IC = 20 mA, f = 2 GHz IP3 22 dBm 16866 ISO Method E 0.4 (0.016) 0.5 (0.016) 0.65(0.026) 1.15(0.045) 0.1 B 0.1 A 1.5 (0.059) 1.7 (0.066) 3 x 0.20 (0.008) 3 x 0.30 (0.012) 1.5 (0.059) 1.7 (0.066) 0.5 (0.016) 1.0 (0.039) |
同様の部品番号 - TSDF1220F |
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同様の説明 - TSDF1220F |
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