1996 Aug 01

8

Philips Semiconductors

Product specification

Silicon N-channel dual-gate MOS-FETs

BF998; BF998R

handbook, full pagewidth

MGE802

330 k

Ω

1.8 k

Ω

360

Ω

100 k

Ω

140 k

Ω

1 nF

1 nF

47

µF

20

µH

1 nF

10 pF

D2

BB405

330 k

Ω

1 nF

1 nF

Vtun

output

50

Ω

output

C1

5.5 pF

50

Ω

input

VDD

VDD

Vagc

47 k

Ω

1 nF

1 nF

1 nF

L2

L1

1 nF

15 pF

D1

BB405

Vtun

input

L1 = 45 nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm.

L2 = 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm.

Fig.17 Gain control test circuit at f = 200 MHz.