SI6866BDQ datasheet(2/3 Pages) VISHAY

部品番号	SI6866BDQ

部品情報	Dual N-Channel 2.5-V (G-S) MOSFET

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Vishay Siliconix

SPICE Device Model Si6866BDQ

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.1

V

On-State Drain Current

a

ID(on)

VDS = 5 V, VGS = 4.5 V

115

A

VGS = 4.5 V, ID = 6 A

0.020

0.022

Drain-Source On-State Resistance

a

rDS(on)

VGS = 2.5 V, ID = 4.9 A

0.032

0.033

Ω

Forward Transconductance

a

gfs

VDS = 10 V, ID = 6 A

21

25

Forward Voltage

a

VSD

IS = 1.5 A, VGS = 0 V

0.80

0.75

V

Dynamic

b

Total Gate Charge

Qg

7.2

7.5

Gate-Source Charge

Qgs

1.4

Gate-Drain Charge

Qgd

VDS = 10 V, VGS = 4.5 V, ID = 6 A

2.2

nC

Turn-On Delay Time

td(on)

26

45

Rise Time

tr

38

53

Turn-Off Delay Time

td(off)

30

Fall Time

tf

VDD = 10 V, RL = 10 Ω

ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω

10

13

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

2

www.vishay.com

Document Number: 72703

S-60146

Rev. B, 13-Feb-06

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