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FM25C160-S データシート(PDF) 9 Page - List of Unclassifed Manufacturers

部品番号 FM25C160-S
部品情報  16Kb FRAM Serial Memory
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FM25C160
Rev. 2.1
Aug. 2003
Page 9 of 14
Applications
The versatility of FRAM technology fits into many
diverse applications. Clearly the strength of higher
write endurance and faster writes make FRAM
superior
to
EEPROM
in
all
but
one-time
programmable applications. The advantage is most
obvious in data collection environments where writes
are frequent and data must be nonvolatile.
The attributes of fast writes and high write endurance
combine in many innovative ways. A short list of
ideas is provided here.
1.
Data collection. In applications where data is
collected and saved, FRAM provides a superior
alternative to other solutions. It is more cost effective
than battery backup for SRAM and provides better
write attributes than EEPROM.
2.
Configuration. Any nonvolatile memory can
retain a configuration. However, if the configuration
changes and power failure is a possibility, the higher
write endurance of FRAM allows changes to be
recorded without restriction. Any time the system-
state is altered, the change can be written. This avoids
writing to memory on power-down when the
available time is short and power scarce.
3.
High noise environments. Writing to EEPROM
in a noisy environment can be challenging. When
severe noise or power fluctuations are present, the
long write time of EEPROM creates a window of
vulnerability
during
which
the
write
can
be
corrupted. The fast write of FRAM is complete
within a microsecond. This time is typically too short
for noise or power fluctuations to disturb it.
4.
Time to market. In a complex system, multiple
software routines may need to access the nonvolatile
memory.
In
this
environment
the
time
delay
associated with programming EEPROM adds undue
complexity to the software development. Each
software
routine
must
wait
for
complete
programming before allowing access to the next
routine. When time to market is critical, FRAM can
eliminate this simple obstacle. As soon as a write is
issued to the FM25C160, it is effectively done -- no
waiting.
5.
RF/ID. In the area of contactless memory,
FRAM provides an ideal solution. Since RF/ID
memory is powered by an RF field, the long
programming time and high current consumption
needed to write EEPROM is unattractive. FRAM
provides a superior solution. The FM25C160 is
suitable for multi-chip RF/ID products.
6.
Maintenance tracking. In sophisticated systems,
the operating history and system-state during a failure
is
important
knowledge.
Maintenance
can
be
expedited when this information has been recorded.
Due to the high write endurance, FRAM makes an
ideal system log. In addition, the convenient interface
of the FM25C160 allows memory to be distributed
throughout the system using minimal additional
resources.


同様の部品番号 - FM25C160-S

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同様の説明 - FM25C160-S

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