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TA2151FN データシート(PDF) 4 Page - Toshiba Semiconductor |
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TA2151FN データシート(HTML) 4 Page - Toshiba Semiconductor |
4 / 10 page TA2151FN 2003-01-16 4 Pin No. Symbol I/O Functional Description Remarks 20 RFRP O Track count signal output terminal. ¾ 21 BTC I Time constant adjustment terminal for bottom detection. Adjusted by capacitance. 22 RFCT O RFRP signal center level output terminal. ¾ 23 PKC I Time constant adjustment terminal for peak detection. Adjusted by capacitance. 24 RFRPIN I Input terminal for track count signal output amp. ¾ 25 RFGO O Output terminal for RF signal amplitude adjustment amp. ¾ 26 GVSW I Amp (FE, TE) gain switching terminal. GVSW Mode GND CD-RW HiZ VCC Normal Low (GND) is for 5 times gain. 27 AGCIN I Input terminal for RF signal amplitude adjustment amp. Connected to RFO through capacitance. 28 RFO O Output terminal for RF signal amp. ¾ 29 GND ¾ Ground terminal. ¾ 30 RFN2 I Input terminal for RF signal amp. ¾ Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Power supply voltage VCC 8 V Power dissipation PD 500 mW Operating temperature Topr -40~85 °C Storage temperature Tstg -55~150 °C |
同様の部品番号 - TA2151FN |
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同様の説明 - TA2151FN |
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