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FDD4685 データシート(Datasheet) 1 Page - Fairchild Semiconductor

部品番号. FDD4685
部品情報  40V P-Channel PowerTrench MOSFET -40V -32A 27m ohm
ダウンロード  6 Pages
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
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tm
October 2006
©2006 Fairchild Semiconductor Corporation
FDD4685 Rev.B
www.fairchildsemi.com
1
FDD4685
40V P-Channel PowerTrench® MOSFET
–40V, –32A, 27mΩ
Features
Max rDS(on) = 27mΩ at VGS = –10V, ID = –8.4A
Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –7A
High performance trench technology for extremely low rDS(on)
RoHS Compliant
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and good switching characteristic offering
superior performance in application.
Application
Inverter
Power Supplies
MOSFET Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
–40
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current -Continuous(Package Limited)
TC= 25°C
–32
A
-Continuous(Silicon Limited)
TC= 25°C
(Note 1)
–40
-Continuous
TA= 25°C
(Note 1a)
–8.4
-Pulsed
–100
EAS
Drain-Source Avalanche Energy
(Note 3)
121
mJ
PD
Power Dissipation
TC= 25°C
69
W
Power Dissipation
(Note 1a)
3
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
RθJC
Thermal Resistance, Junction to Case
1.8
°C/W
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
40
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD4685
FDD4685
D-PAK(TO-252)
13’’
12mm
2500 units
G
S
D
TO -252
D-PAK
(TO -252)
S
G
D




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