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AM29BL162CB90RZI データシート(PDF) 17 Page - SPANSION |
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AM29BL162CB90RZI データシート(HTML) 17 Page - SPANSION |
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17 / 50 page  July 8, 2005 Am29BL162C 15 DA T A SH EET COMMON FLASH MEMORY INTERFACE (CFI) The Common Flash Interface (CFI) specification out- lines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-indepen- dent, JEDEC ID-independent, and forward- and back- ward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h, any time the device is ready to read array data. The system can read CFI information at the addresses given in Tables 4–7. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Tables 4–7. The system must write the reset command to return the device to the autoselect mode. For further information, please refer to the CFI Specifi- cation and CFI Publication 100, available via the World Wide Web at http://www.amd.com/products/nvd/over- view/cfi.html. Alternatively, contact an AMD represen- tative for copies of these documents. To terminate reading CFI data, the system must write the reset command. Table 4. CFI Query Identification String Addresses Data Description 10h 11h 12h 0051h 0052h 0059h Query Unique ASCII string “QRY” 13h 14h 0002h 0000h Primary OEM Command Set 15h 16h 0040h 0000h Address for Primary Extended Table 17h 18h 0000h 0000h Alternate OEM Command Set (00h = none exists) 19h 1Ah 0000h 0000h Address for Alternate OEM Extended Table (00h = none exists) Table 5. System Interface String Addresses Data Description 1Bh 0027h VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Ch 0036h VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Dh 0000h VPP Min. voltage (00h = no VPP pin present) 1Eh 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 0004h Typical timeout per single word write 2N µs 20h 0000h Typical timeout for Min. size buffer write 2N µs (00h = not supported) 21h 000Ah Typical timeout per individual block erase 2N ms 22h 0000h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 0005h Max. timeout for word write 2N times typical 24h 0000h Max. timeout for buffer write 2N times typical 25h 0004h Max. timeout per individual block erase 2N times typical 26h 0000h Max. timeout for full chip erase 2N times typical (00h = not supported) |
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同様の説明 - AM29BL162CB90RZI |
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