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BLF545 データシート(PDF) 4 Page - NXP Semiconductors |
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BLF545 データシート(HTML) 4 Page - NXP Semiconductors |
4 / 12 page October 1992 4 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 CHARACTERISTICS (per section) Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 10 mA 65 −− V IDSS drain-source leakage current VGS = 0; VDS = 28 V −− 1mA IGSS gate-source leakage current ±VGS = 20 V; VDS =0 −− 1 µA VGS(th) gate-source threshold voltage ID = 40 mA; VDS = 10 V 1 − 4V gfs forward transconductance ID = 1.2 A; VDS = 10 V 600 900 − mS RDS(on) drain-source on-state resistance ID = 1.2 A; VGS = 10 V − 0.85 1.25 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V − 4.8 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 32 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 24 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 6.4 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values per section. VDS = 10 V. handbook, halfpage 4 −4 0 2 −2 MDA504 ID (A) T.C (mV/K) 110 10−2 10−1 Fig.5 Drain current as a function of gate-source voltage, typical values per section. VDS = 10 V; Tj = 25 °C. handbook, halfpage 0 6 4 2 0 5 VGS (V) ID (A) 10 20 15 MDA505 |
同様の部品番号 - BLF545 |
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同様の説明 - BLF545 |
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