Specifications and information are subject to change without notice.

WJ Communications, Inc

• Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com

September 2004

FP2189

1 - Watt HFET

Product Information

Product Features

compliant

SOT-89 Package

Applications

Product Description

The FP2189 is a high performance 1-Watt HFET

(Heterostructure FET) in a low-cost SOT-89 surface-

mount package. This device works optimally at a drain

bias of +8 V and 250 mA to achieve +43 dBm output IP3

performance and an output power of +30 dBm at 1-dB

compression, while providing 18.5 dB gain at 900 MHz.

The device conforms to WJ Communications’ long history

of producing high reliability and quality components. The

FP2189 has an associated MTTF of greater than 100 years

at a mounting temperature of 85

°C and is available in both

the standard SOT-89 package and the environmentally-

friendly lead-free/green/RoHS-compliant and green SOT-

89 package. All devices are 100% RF & DC tested.

The product is targeted for use as driver amplifiers for

wireless infrastructure where high performance and high

efficiency are required.

Functional Diagram

Function

Pin No.

Input / Gate

1

Output / Drain

3

Ground

2, 4

Specifications

DC Parameter

Units Min

Typ

Max

(1)

mA

445

615

705

mS

280

(2)

V

-2.1

RF Parameter

(3)

Units

Min

Typ

Max

Frequency Range

MHz

50 - 4000

Test Frequency

MHz

800

Small Signal Gain

dB

18.5

SS Gain (50

Ω, unmatched)

dB

15

21

Maximum Stable Gain

dB

24

Output P1dB

dBm

+30

Output IP3

(4)

dBm

+43

Noise Figure

dB

4.5

Drain Bias

+8V @ 250 mA

4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The

suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

Absolute Maximum Rating

Parameter

Rating

Operating Case Temperature

-40 to +85

°C

Storage Temperature

-55 to +125

°C

DC Power

4.0 W

RF Input Power (continuous)

6 dB above Input P1dB

+14 V

Junction Temperature

+220

° C

Operation of this device above any of these parameters may cause permanent damage.

Typical Performance

(5)

Parameter

Units

Typical

Frequency

MHz

915

1960

2140

2450

Gain

dB

18.7

15.6

14.4

13.0

Input Return Loss

dB

21

14.6

23

26

Output Return Loss

dB

8.3

12

11.5

9.6

Output P1dB

dBm

+30.2

+30.4

+30.6 +31.2

Output IP3

(4)

dBm

+42.8

+43.5

+43.9 +45.3

Noise Figure

dB

4.5

3.4

4.5

IS-95 Channel Power

@ -45 dBc ACPR

dBm

+24.5

+23.8

W-CDMA Ch. Power

@ -45 dBc ACLR

+22.2

Drain Voltage

V

+8

Drain Current

mA

250

5. Typical parameters represent performance in a tuned application circuit.

Ordering Information

Part No.

Description

FP2189

1 -Watt HFET

(leaded SOT-89 Pkg)

FP2189-G

1 -Watt HFET

(lead-free/green/RoHS-compliant SOT-89 Pkg)

FP2189-PCB900S

870 – 960 MHz Application Circuit

FP2189-PCB1900S

1930 – 1990 MHz Application Circuit

FP2189-PCB2140S

2110 – 2170 MHz Application Circuit

RF IN

GND

RF OUT

GND

1

2

3

4