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DB92003-AAS/A1
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (V
F)
1.2
1.6
V
I
F = 20mA
Reverse Voltage (V
R)3
V
I
R = 10µA
Reverse Current (I
R)10
µAV
R = 3V
Output
Collector-emitter Breakdown (BV
CEO)30
V
I
C = 1mA
( Note 1 )
Emitter-collector Breakdown (BV
ECO)
5
V
I
E = 100µA
Collector-emitter Dark Current (I
CEO)
100
nA
V
CE = 10V
Coupled
On-State Collector Current I
C ( ON )
( Note 1 )
ISTS150, ISTS250
250
µA
20mA I
F , 10V VCE
( no apertures )
ISTS822S, ISTS832S
250
µA
20mA I
F , 10V VCE
(0.25mm apertures phototransistors only)
ISTS822SD, ISTS832SD
100
µA
20mA I
F , 10V VCE
( 0.25mm apertures in front of both -
- emitters and phototransistors )
Collector-emitter Saturation VoltageV
CE(SAT)
ISTS150, ISTS250
0.4
V
20mA I
F , 125µA IC
ISTS822S, ISTS832S
0.4
V
20mA I
F , 125µA IC
ISTS822SD, ISTS832SD
0.4
V
20mA I
F , 50µA IC
Rise Time
tr
6
µsV
CC = 5V,
Fall Time
tf
6
µsI
F = 20mA, RL= 100Ω
Note 1
Special Selections are available on request. Please consult the factory.
24/9/97
ELECTRICAL CHARACTERISTICS ( T
A= 25°C Unless otherwise noted )