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ADM1181A データシート(PDF) 10 Page - Analog Devices |
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ADM1181A データシート(HTML) 10 Page - Analog Devices |
10 / 16 page ADM202E/ADM1181A Rev. C | Page 10 of 16 ESD TESTING (IEC1000-4-2) IEC1000-4-2 (previously 801-2) specifies compliance testing using two coupling methods, contact discharge and air-gap discharge. Contact discharge calls for a direct connection to the unit being tested. Air-gap discharge uses a higher test voltage, but does not make direct contact with the unit being tested. With air-gap discharge, the discharge gun is moved toward the unit being tested, developing an arc across the air gap. This method is influenced by humidity, temperature, barometric pressure, distance, and rate of closure of the discharge gun. Although less realistic, the contact-discharge method is more repeatable and is gaining preference to the air-gap method. Although very little energy is contained within an ESD pulse, the extremely fast rise time coupled with high voltages can cause failures in unprotected semiconductors. Catastrophic destruction can occur immediately as a result of arcing or heating. Even if catastrophic failure does not occur immediately, the device might suffer from parametric degradation, which can result in degraded performance. The cumulative effects of continuous exposure can eventually lead to complete failure. I/O lines are particularly vulnerable to ESD damage. Simply touching or plugging in an I/O cable can result in a static discharge, which can damage or completely destroy the interface product connected to the I/O port. Traditional ESD test methods, such as the MIL-STD-883B method 3015.7, do not fully test a product’s susceptibility to this type of discharge. This test was intended to test a product’s susceptibility to ESD damage during handling. Each pin is tested with respect to all other pins. There are some important differences between the traditional test and the IEC test: • The IEC test is much more stringent in terms of discharge energy. The injected peak current is over four times greater. • The current rise time is significantly faster in the IEC test. • The IEC test is carried out while power is applied to the device. It is possible that the ESD discharge could induce latch-up in the device being tested. Therefore, this test is more representative of a real-world I/O discharge where the equipment is operating normally with power applied. For peace of mind, however, both tests should be performed to ensure maximum protection during both handling and field service. R1 R2 C1 DEVICE UNDER TEST HIGH VOLTAGE GENERATOR ESD TEST METHOD R2 C1 H. BODY MIL-STD883B 1.5k Ω 100pF IEC1000-4-2 330 Ω 150pF Figure 18. ESD Test Standards 100 90 36.8 10 tDL tRL TIME t Figure 19. Human Body Model ESD Current Waveform 100 90 10 TIME t 30ns 60ns 0.1 TO 1ns Figure 20. IEC1000-4-2 ESD Current Waveform The ADM202E/ADM1181E products are tested using both of the previously mentioned test methods. Pins are tested with respect to all other pins as per the MIL-STD-883B specification. In addition, I/O pins are tested as per the IEC test specification. The products were tested under the following conditions: • Power-On • Power-Off There are four levels of compliance defined by IEC1000-4-2. The ADM202E/ADM1181A products meet the most stringent level of compliance both for contact and for air-gap discharge. This means that the products are able to withstand contact discharges in excess of 8 kV and air-gap discharges in excess of 15 kV. |
同様の部品番号 - ADM1181A |
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同様の説明 - ADM1181A |
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