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CS5308 データシート(PDF) 21 Page - ON Semiconductor

部品番号 CS5308
部品情報  Two?뭁hase PWM Controller with Integrated Gate Drivers for VRM 8.5
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ホームページ  http://www.onsemi.com
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QG is the MOSFET total gate charge to obtain RDS(on).
Commonly specified in the data sheet.
Vg is the gate drive voltage.
QRR is the reverse recovery charge of the lower MOSFET.
Qoss is the MOSFET output charge specified in the data
sheet.
For the lower or synchronous MOSFET, the power
dissipation can be approximated from:
PD,SYNCH + (IRMS,SYNCH2 @ RDS(on))
) (Vfdiode @ IO,MAX 2 @ t_nonoverlap @ fSW)
(26)
The first term represents the conduction or IR losses when
the MOSFET is ON and the second term represents the diode
losses that occur during the gate non−overlap time.
All terms were defined in the previous discussion for the
control MOSFET with the exception of:
(27)
IRMS,SYNCH + 1 * D
@ [(ILo,MAX2 ) ILo,MAX @ ILo,MIN ) ILo,MIN2) 3]1 2
where:
Vfdiode is the forward voltage of the MOSFET’s intrinsic
diode at the converter output current.
t_nonoverlap is the non−overlap time between the upper
and lower gate drivers to prevent cross conduction.
This time is usually specified in the data sheet for the
control IC.
+
w
RCS1
CS1
CCS1
L1
0 A
GVDRP
+
RCS2
CS2
CCS2
L2
0 A
GVDRP
CSREF
COMP
Error
Amp
VID Setting
IBIASVFB
RDRP
RVFBK
VDRP = VID
VFB = VID
VCORE
IDRP = 0
IFBK = IBIASVFB
VCORE = VID + IBIASVFB w RVFBk
Figure 17. AVP Circuitry at No−Load
+ −
When the MOSFET power dissipations are known, the
designer can calculate the required thermal impedance to
maintain a specified junction temperature at the worst case
ambient operating temperature
qT t (TJ * TA) PD
(28)
where:
qT is the total thermal impedance (qJC + qSA);
qJC is the junction−to−case thermal impedance of the
MOSFET;
qSA is the sink−to−ambient thermal impedance of the
heatsink assuming direct mounting of the MOSFET (no
thermal “pad” is used);
TJ is the specified maximum allowed junction
temperature;
TA is the worst case ambient operating temperature.
For TO−220 and TO−263 packages, standard FR−4
copper clad circuit boards will have approximate thermal
resistances (
qSA) as shown below:
Pad Size
(in2/mm2)
Single−Sided
1 oz. Copper
0.50/323
60−65°C/W
0.75/484
55−60°C/W
1.00/645
50−55°C/W
1.50/968
45−50°C/W
As with any power design, proper laboratory testing
should be performed to insure the design will dissipate the
required power under worst case operating conditions.
Variables considered during testing should include
maximum ambient temperature, minimum airflow,
maximum input voltage, maximum loading, and component
variations (i.e., worst case MOSFET RDS(on)). Also, the
inductors and capacitors share the MOSFET’s heatsinks and
will add heat and raise the temperature of the circuit board
and MOSFET. For any new design, its advisable to have as


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