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NTK3139P データシート(PDF) 2 Page - ON Semiconductor

部品番号 NTK3139P
部品情報  Power MOSFET ??0 V, ??80 mA, Single P?묬hannel with ESD Protection, SOT??23
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
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NTK3139P データシート(HTML) 2 Page - ON Semiconductor

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NTK3139P
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2
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State
(Note 3)
RqJA
280
°C/W
Junction−to−Ambient – t = 5 s
(Note 3)
RqJA
228
Junction−to−Ambient – Steady State Minimum Pad
(Note 4)
RqJA
400
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface mounted on FR4 board using the minimum recommended pad size
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown
Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
V
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS/TJ
ID = −250 mA, Reference to 25°C
−16.5
mV/
°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = −16V
TJ = 25°C
−1.0
mA
TJ = 125°C
−2.0
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±4.5 V
±2.0
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
−0.45
−1.2
V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
2.4
mV/
°C
Drain−to−Source On Resistance
RDS(on)
VGS = −4.5 V, ID = −780 mA
0.38
0.48
W
VGS = −2.5 V, ID = −660 mA
0.52
0.67
VGS = −1.8 V, ID = −100 mA
0.70
0.95
VGS = −1.5 V, ID = −100 mA
0.95
2.20
Forward Transconductance
gFS
VDS = −10 V, ID = −540 mA
1.2
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = −16 V
113
170
pF
Output Capacitance
COSS
15
25
Reverse Transfer Capacitance
CRSS
9.0
15
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn On Delay Time
td(ON)
VGS = −4.5 V, VDS = −10 V,
ID = −200 mA, RG = 10 W
9.0
ns
Rise Time
tr
5.8
TurnOff Delay Time
td(OFF)
32.7
Fall Time
tf
20.3
DRAIN SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = −350 mA
TJ = 25°C
−0.8
−1.2
V
Reverse Recovery Time
tRR
VGS = 0 V, dISD/dt = 100 A/ms,
IS = −1.0 A, VDD = −20 V
13.2
ns
Charge Time
ta
11.8
Discharge Time
tb
1.4
Reverse Recovery Charge
QRR
5.0
nC
5. Pulse Test: pulse width = 300
ms, duty cycle = 2%
6. Switching characteristics are independent of operating junction temperatures


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