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NTK3139P データシート(PDF) 2 Page - ON Semiconductor |
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NTK3139P データシート(HTML) 2 Page - ON Semiconductor |
2 / 5 page NTK3139P http://onsemi.com 2 THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) RqJA 280 °C/W Junction−to−Ambient – t = 5 s (Note 3) RqJA 228 Junction−to−Ambient – Steady State Minimum Pad (Note 4) RqJA 400 3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 4. Surface mounted on FR4 board using the minimum recommended pad size MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 mA, Reference to 25°C −16.5 mV/ °C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −16V TJ = 25°C −1.0 mA TJ = 125°C −2.0 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±4.5 V ±2.0 mA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA −0.45 −1.2 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 2.4 mV/ °C Drain−to−Source On Resistance RDS(on) VGS = −4.5 V, ID = −780 mA 0.38 0.48 W VGS = −2.5 V, ID = −660 mA 0.52 0.67 VGS = −1.8 V, ID = −100 mA 0.70 0.95 VGS = −1.5 V, ID = −100 mA 0.95 2.20 Forward Transconductance gFS VDS = −10 V, ID = −540 mA 1.2 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = −16 V 113 170 pF Output Capacitance COSS 15 25 Reverse Transfer Capacitance CRSS 9.0 15 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn On Delay Time td(ON) VGS = −4.5 V, VDS = −10 V, ID = −200 mA, RG = 10 W 9.0 ns Rise Time tr 5.8 TurnOff Delay Time td(OFF) 32.7 Fall Time tf 20.3 DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −350 mA TJ = 25°C −0.8 −1.2 V Reverse Recovery Time tRR VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A, VDD = −20 V 13.2 ns Charge Time ta 11.8 Discharge Time tb 1.4 Reverse Recovery Charge QRR 5.0 nC 5. Pulse Test: pulse width = 300 ms, duty cycle = 2% 6. Switching characteristics are independent of operating junction temperatures |
同様の部品番号 - NTK3139P |
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同様の説明 - NTK3139P |
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