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IRF6616 データシート(PDF) 2 Page - International Rectifier

部品番号 IRF6616
部品情報  DirectFET Power MOSFET
Download  9 Pages
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRF6616 データシート(HTML) 2 Page - International Rectifier

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IRF6616
 Pulse width ≤ 400µs; duty cycle ≤ 2%.
‚ Repetitive rating; pulse width limited by max. junction temperature.
Notes:
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
37
–––
mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.7
5.0
m
–––
4.6
6.2
VGS(th)
Gate Threshold Voltage
1.35
1.8
2.25
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-5.5
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
75
–––
–––
S
Qg
Total Gate Charge
–––
29
44
Qgs1
Pre-Vth Gate-to-Source Charge
–––
8.6
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
2.4
–––
nC
Qgd
Gate-to-Drain Charge
–––
9.4
–––
Qgodr
Gate Charge Overdrive
–––
8.6
–––
See Fig. 15
Qsw
Switch Charge (Qgs2 + Qgd)
–––
12
–––
Qoss
Output Charge
–––
15
–––
nC
RG
Gate Resistance
–––
1.3
–––
td(on)
Turn-On Delay Time
–––
15
–––
tr
Rise Time
–––
19
–––
td(off)
Turn-Off Delay Time
–––
21
–––
ns
tf
Fall Time
–––
4.4
–––
Ciss
Input Capacitance
–––
3765
–––
Coss
Output Capacitance
–––
560
–––
pF
Crss
Reverse Transfer Capacitance
–––
285
–––
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
IS
Continuous Source Current
–––
–––
110
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
150
(Body Diode)
d
VSD
Diode Forward Voltage
–––
0.8
1.0
V
trr
Reverse Recovery Time
–––
15
23
ns
Qrr
Reverse Recovery Charge
–––
33
50
nC
MOSFET symbol
Clamped Inductive Load
VDS = 20V, ID = 15A
Conditions
ƒ = 1.0MHz
VDS = 16V, VGS = 0V
VGS = 20V
VGS = -20V
VDS = 32V, VGS = 0V
VDS = 20V
VDS = 32V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 19A
c
VGS = 4.5V, ID = 15A
c
VDS = VGS, ID = 250µA
TJ = 25°C, IF = 15A
VGS = 4.5V
ID = 15A
VGS = 0V
VDS = 20V
ID = 15A
VDD = 16V, VGS = 4.5V
c
di/dt = 500A/µs
c
TJ = 25°C, IS = 15A, VGS = 0V
c
showing the
integral reverse
p-n junction diode.


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