データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

KM62U256DLRGE-8L データシート(PDF) 5 Page - Samsung semiconductor

部品番号 KM62U256DLRGE-8L
部品情報  32Kx8 bit Low Power and Low Voltage CMOS Static RAM
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  SAMSUNG [Samsung semiconductor]
ホームページ  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM62U256DLRGE-8L データシート(HTML) 5 Page - Samsung semiconductor

  KM62U256DLRGE-8L Datasheet HTML 1Page - Samsung semiconductor KM62U256DLRGE-8L Datasheet HTML 2Page - Samsung semiconductor KM62U256DLRGE-8L Datasheet HTML 3Page - Samsung semiconductor KM62U256DLRGE-8L Datasheet HTML 4Page - Samsung semiconductor KM62U256DLRGE-8L Datasheet HTML 5Page - Samsung semiconductor KM62U256DLRGE-8L Datasheet HTML 6Page - Samsung semiconductor KM62U256DLRGE-8L Datasheet HTML 7Page - Samsung semiconductor KM62U256DLRGE-8L Datasheet HTML 8Page - Samsung semiconductor KM62U256DLRGE-8L Datasheet HTML 9Page - Samsung semiconductor  
Zoom Inzoom in Zoom Outzoom out
 5 / 9 page
background image
KM62V256D, KM62U256D Family
CMOS SRAM
Revision 1.0
November 1997
5
CL1)
1. Including scope and jig capacitance
AC OPERATING CONDITIONS
TEST CONDITIONS (Test Load and Test Input/Output Reference)
Input pulse level : 0.4 to 2.4V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V
Output load (See right) :CL=100pF+1TTL
CL1)=30pF+1TTL
1. Refer to AC CHARACTERISTICS
AC CHARACTERISTICS (KM62V256D Family:Vcc=3.0~3.6V, KM62U256D Family:Vcc=2.7~3.3V
Commercial product :TA=0 to 70
°C, Extended product :TA=-25 to 85°C, Industrial product :TA=-40 to 85°C)
1. The parameter is measured with 30pF test load
Parameter List
Symbol
Speed Bins
Units
701)ns
85ns
100ns
Min
Max
Min
Max
Min
Max
Read
Read cycle time
tRC
70
-
85
-
100
-
ns
Address access time
tAA
-
70
-
85
-
100
ns
Chip select to output
tCO
-
70
-
85
-
100
ns
Output enable to valid output
tOE
-
35
-
40
-
50
ns
Chip select to low-Z output
tLZ
10
-
10
-
10
-
ns
Output enable to low-Z output
tOLZ
5
-
5
-
5
-
ns
Chip disable to high-Z output
tHZ
0
30
0
30
0
35
ns
Output disable to high-Z output
tOHZ
0
30
0
30
0
35
ns
Output hold from address
tOH
5
-
10
-
15
-
ns
Write
Write cycle time
tWC
70
-
85
-
100
-
ns
Chip select to end of write
tCW
60
-
70
-
80
-
ns
Address set-up time
tAS
0
-
0
-
0
-
ns
Address valid to end of write
tAW
60
-
70
-
80
-
ns
Write pulse width
tWP
50
-
60
-
70
-
ns
Write recovery time
tWR
0
-
0
-
0
-
ns
Write to output high-Z
tWHZ
0
25
0
25
0
35
ns
Data to write time overlap
tDW
30
-
35
-
40
-
ns
Data hold from write time
tDH
0
-
0
-
0
-
ns
End write to output low-Z
tOW
5
-
10
-
10
-
ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Min
Typ
Max
Unit
Vcc for data retention
VDR
CS
≥Vcc-0.2V
2.0
-
3.6
V
Data retention current
IDR
Vcc=3.0V, CS
≥Vcc-0.2V
-
5
µA
Data retention set-up time
tSDR
See data retention waveform
0
-
-
ms
Recovery time
tRDR
5
-
-


同様の部品番号 - KM62U256DLRGE-8L

メーカー部品番号データシート部品情報
logo
Samsung semiconductor
KM62U256CLG-10L SAMSUNG-KM62U256CLG-10L Datasheet
90Kb / 12P
   32Kx8 bit Low Power AND Low Vcc CMOS Static RAM
KM62U256CLG-8L SAMSUNG-KM62U256CLG-8L Datasheet
90Kb / 12P
   32Kx8 bit Low Power AND Low Vcc CMOS Static RAM
KM62U256CLRG-10L SAMSUNG-KM62U256CLRG-10L Datasheet
90Kb / 12P
   32Kx8 bit Low Power AND Low Vcc CMOS Static RAM
KM62U256CLRG-8L SAMSUNG-KM62U256CLRG-8L Datasheet
90Kb / 12P
   32Kx8 bit Low Power AND Low Vcc CMOS Static RAM
KM62U256CLTG-10L SAMSUNG-KM62U256CLTG-10L Datasheet
90Kb / 12P
   32Kx8 bit Low Power AND Low Vcc CMOS Static RAM
More results

同様の説明 - KM62U256DLRGE-8L

メーカー部品番号データシート部品情報
logo
Samsung semiconductor
K6X0808T1D SAMSUNG-K6X0808T1D Datasheet
153Kb / 9P
   32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D SAMSUNG-K6T0808C1D Datasheet
170Kb / 9P
   32Kx8 bit Low Power CMOS Static RAM
KM62256D SAMSUNG-KM62256D Datasheet
170Kb / 9P
   32Kx8 bit Low Power CMOS Static RAM
K6X0808C1D SAMSUNG-K6X0808C1D Datasheet
166Kb / 9P
   32Kx8 bit Low Power CMOS Static RAM
KM62256C SAMSUNG-KM62256C Datasheet
158Kb / 9P
   32Kx8 bit Low Power CMOS Static RAM
KM62256CL SAMSUNG-KM62256CL Datasheet
162Kb / 10P
   32Kx8 bit Low Power CMOS Static RAM
KM62V256C SAMSUNG-KM62V256C Datasheet
90Kb / 12P
   32Kx8 bit Low Power AND Low Vcc CMOS Static RAM
logo
NanoAmp Solutions, Inc.
ES62UL256 NANOAMP-ES62UL256 Datasheet
57Kb / 6P
   32Kx8 Bit Ultra-Low Power Asynchronous Static RAM
logo
Samsung semiconductor
K6X4016T3F SAMSUNG-K6X4016T3F Datasheet
138Kb / 9P
   256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T2008V2A SAMSUNG-K6T2008V2A Datasheet
194Kb / 10P
   256Kx8 bit Low Power and Low Voltage CMOS Static RAM
More results


Html Pages

1 2 3 4 5 6 7 8 9


データシート ダウンロード

Go To PDF Page


リンク URL




プライバシーポリシー
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com