データシートサーチシステム |
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IRF3709ZCSPBF データシート(PDF) 1 Page - International Rectifier |
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IRF3709ZCSPBF データシート(HTML) 1 Page - International Rectifier |
1 / 11 page www.irf.com 1 7/20/04 IRF3709ZCSPbF IRF3709ZCLPbF HEXFET® Power MOSFET Notes through are on page 11 Applications Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free D2Pak IRF3709ZCS TO-262 IRF3709ZCL PD - 95529 VDSS RDS(on) max Qg 30V 6.3m : 17nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W PD @TC = 100°C Maximum Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case i ––– 1.89 °C/W RθJA Junction-to-Ambient (PCB Mount) g ––– 40 79 0.53 40 Max. 87 h 62 h 350 ± 20 30 300 (1.6mm from case) -55 to + 175 |
同様の部品番号 - IRF3709ZCSPBF |
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同様の説明 - IRF3709ZCSPBF |
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