2SC1623L5 datasheet(1/1 Pages) MCC

部品番号	2SC1623L5

部品情報	NPN Silicon Epitaxial Transistors

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メーカー	MCC [Micro Commercial Components]

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2SC1623

NPN Silicon

Epitaxial Transistors

Features

•

High DC Current Gain: hFE=200 TYP.(VCE=6.0V, IC=1.0mA)

•

High voltage: VCEO=50V

Maximum Ratings

Symbol

Rating

Unit

VCEO

Collector-Emitter Voltage

50

V

VCBO

Collector-Base Voltage

60

V

VEBO

Emitter-Base Voltage

5.0

V

IC

Collector Current

100

mA

PC

Collector power dissipation

200

mW

TJ

Junction Temperature

-55 to +150

OC

TSTG

Storage Temperature

-55 to +150

OC

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

OFF CHARACTERISTICS

ICBO

Collector Cutoff Current

(VCB=60Vdc,IE=0)

---

0.1

uAdc

IEBO

Emitter Cutoff Current

(VEB=5.0Vdc, IC=0)

---

0.1

uAdc

ON CHARACTERISTICS

hF

DC Current Gain*

(IC=1.0mAdc, VCE=6.0Vdc)

90

200

600

---

VCE(sat)

Collector Saturation Voltage*

(IC=100mAdc, IB=10mAdc)

---

0.15

0.3

Vdc

VBE(SAT)

Base Saturation Voltage*

(IC=100mAdc,IB=10mAdc)

---

0.86

1.0

Vdc

VBE

Base Emitter Voltage*

(VCE=6.0Vdc, IC=1.0mAdc)

0.55

0.62

0.65

Vdc

Cob

Collector Capacitance

(VCB=6.0Vdc, IE=0, f=1.0MHz)

---

3.0

---

pF

fT

Gain Bandwidth product

(VCE=6.0Vdc, IE=10mAdc)

---

250

---

MHz

hFE CLASSIFICATION

Marking

L4

L5

L6

L7

hFE

90-180

135-270

200-400

300-600

* Pulse Test PW<350us, duty cycle<2%

SOT-23

Suggested Solder

Pad Layout

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.110

.120

2.80

3.04

B

.083

.098

2.10

2.64

C

.047

.055

1.20

1.40

D

.035

.041

.89

1.03

E

.070

.081

1.78

2.05

F

.018

.024

.45

.60

G

.0005

.0039

.013

.100

H

.035

.044

.89

1.12

J

.003

.007

.085

.180

K

.015

.020

.37

.51

A

B

C

D

E

F

G

H

J

.079

2.000

inches

mm

.031

.800

.035

.900

.037

.950

.037

.950

K

www.mccsemi.com

Revision: 2

2003/04/30

omponents

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Street Chatsworth

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