KM641001B datasheet(4/9 Pages) SAMSUNG

部品番号	KM641001B

部品情報	256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out

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メーカー	SAMSUNG [Samsung semiconductor]

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KM641001B/BL

CMOS SRAM

PRELIMINARY

Rev. 3.0

- 4 -

July 1998

TEST CONDITIONS

Parameter

Value

Input Pulse Levels

0V to 3V

Input Rise and Fall Times

3ns

Input and Output timing Reference Levels

1.5V

Output Loads

See below

AC CHARACTERISTICS(TA=0 to 70

°C, VCC=5.0V±10%, unless otherwise noted.)

READ CYCLE

Parameter

Symbol

KM641001B/BL-15

KM641001B/BL-20

Unit

Min

Max

Min

Max

Read Cycle Time

tRC

15

-

20

-

ns

Address Access Time

tAA

-

15

-

20

ns

Chip Select to Output

tCO

-

15

-

20

ns

Output Enable to Valid Output

tOE

-

8

-

10

ns

Chip Enable to Low-Z Output

tLZ

3

-

3

-

ns

Output Enable to Low-Z Output

tOLZ

0

-

0

-

ns

Chip Disable to High-Z Output

tHZ

0

6

0

8

ns

Output Disable to High-Z Output

tOHZ

0

6

0

8

ns

Output Hold from Address Change

tOH

3

-

3

-

ns

Chip Selection to Power Up Time

tPU

0

-

0

-

ns

Chip Selection to Power DownTime

tPD

-

15

-

20

ns

Output Loads(A)

Output Loads(B)

DOUT

5pF*

480

Ω

255

Ω

for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ

+5.0V

DOUT

30pF*

480

Ω

255

Ω

+5.0V

* Including Scope and Jig Capacitance

同様の部品番号 - KM641001B

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	KM641001A-20	127Kb / 8P	256Kx 4 High Speed Static RAM(5V Operating), Evolutionary Pin Out Operated at Commercial Temperature Range

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