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BU1706AX データシート(PDF) 5 Page - NXP Semiconductors |
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BU1706AX データシート(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX Fig.13. Forward bias safe operating area. T hs = 25 ˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. Fig.14. Typical collector-emitter saturation voltage. V CEsat = f(IB); parameter IC Fig.15. Typical DC current gain. h FE = f(IC); parameter VCE Fig.16. Reverse bias safe operating area. T j ≤ Tjmax IC / A VCE / V 0.01 0.1 1 10 1 10 100 1000 tp = 100 us 1 ms 10 ms DC CDC I CM I tot P 0.01 1 IC / A BU1706A 100 10 1 0.1 0.1 10 h FE 1 V 5 V Tj = 25 C Tj = 125 C 6 5 4 3 2 1 0 0 400 800 1200 1600 2000 IC / A BU1706A VCE / V 0.01 1 IB / A VCESAT / V BU1706A 10 1 0.1 0.01 0.1 10 IC = 0.5A 1.5 A 2A 3A Tj = 25 C Tj = 125 C April 1994 5 Rev 1.000 |
同様の部品番号 - BU1706AX |
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同様の説明 - BU1706AX |
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