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BSH202 データシート(PDF) 6 Page - Nexperia B.V. All rights reserved

部品番号 BSH202
部品情報  P-channel enhancement mode MOS transistor
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メーカー  NEXPERIA [Nexperia B.V. All rights reserved]
ホームページ  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

BSH202 データシート(HTML) 6 Page - Nexperia B.V. All rights reserved

  BSH202 Datasheet HTML 1Page - Nexperia B.V. All rights reserved BSH202 Datasheet HTML 2Page - Nexperia B.V. All rights reserved BSH202 Datasheet HTML 3Page - Nexperia B.V. All rights reserved BSH202 Datasheet HTML 4Page - Nexperia B.V. All rights reserved BSH202 Datasheet HTML 5Page - Nexperia B.V. All rights reserved BSH202 Datasheet HTML 6Page - Nexperia B.V. All rights reserved BSH202 Datasheet HTML 7Page - Nexperia B.V. All rights reserved BSH202 Datasheet HTML 8Page - Nexperia B.V. All rights reserved  
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Philips Semiconductors
Product specification
P-channel enhancement mode
BSH202
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG)
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
BSH202
-14
-12
-10
-8
-6
-4
-2
0
01234
Gate charge, (nC)
Gate-source voltage, VGS (V)
VDD = 15 V
RD = 50 Ohms
Tj = 25 C
BSH202
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
Drain-Source Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
August 1998
5
Rev 1.000


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