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TSHF5410 データシート(PDF) 2 Page - Vishay Siliconix |
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TSHF5410 データシート(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number 81303 Rev. 1.1, 26-Oct-06 TSHF5410 Vishay Semiconductors Basic Characteristics Tamb = 25 °C, unless otherwise specified Figure 1. Power Dissipation Limit vs. Ambient Temperature 20112 0 50 100 150 200 10 20 30 40 50 60 70 80 90 0 100 T amb - Ambient Temperature (°C) R thJA = 270 K/W Figure 2. Forward Current Limit vs. Ambient Temperature T amb - Ambient Temperature (°C) 20113 010 20 30 40 50 60 70 8090 100 0 25 50 75 100 125 R thJA = 270 K/W Parameter Test condition Symbol Min Typ. Max Unit Forward Voltage IF = 100 mA, tp = 20 ms VF 1.4 1.6 V IF = 1 A, tp = 100 µs VF 2.3 V Temp. Coefficient of VF IF = 100 mA TKVF - 2.1 mV/K Reverse Current VR = 5 V IR 10 µA Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 Cj 125 pF Radiant Intensity IF = 100 mA, tp = 20 ms Ie 34 65 170 mW/sr IF = 1 A, tp = 100 µs Ie 650 mW/sr Radiant Power IF = 100 mA, tp = 20 ms φ e 48 mW Temp. Coefficient of φ e IF = 100 mA TK φ e - 0.35 %/K Angle of Half Intensity ϕ ± 22 deg Peak Wavelength IF = 100 mA λ p 890 nm Spectral Bandwidth IF = 100 mA Δλ 40 nm Temp. Coefficient of λ p IF = 100 mA TK λ p 0.25 nm/K Rise Time IF = 100 mA tr 30 ns Fall Time IF = 100 mA tf 30 ns Cut-Off Frequency IDC = 70 mA, IAC = 30 mA pp fc 12 MHz Virtual Source Diameter ∅ 2.1 mm |
同様の部品番号 - TSHF5410 |
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同様の説明 - TSHF5410 |
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