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STP62NS04Z データシート(PDF) 4 Page - STMicroelectronics

部品番号 STP62NS04Z
部品情報  N-channel clamped 12.5mOHM - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP62NS04Z データシート(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP62NS04Z
4/12
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
33
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 16V
10
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±10V
10
µA
VGSS
Gate-Source
Breakdown Voltage
IGS = 100 µA
18
V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
24
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 30A
12.5
15
m
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS = 15V, ID = 30A
20
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f = 1 MHz,
VGS = 0
1330
420
135
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 20V, ID = 40A
VGS =10V
34
10
11.5
47
nC
nC
nC
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD= 20V, ID= 20A,
RG=4.7Ω, VGS = 10V
Figure 13 on page 8
13
104
41
42
ns
ns
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Vclamp = 30V, ID = 40A
RG =4.7Ω, VGS = 10V
Figure 13 on page 8
30
54
90
ns
ns
ns


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