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STP62NS04Z データシート(PDF) 3 Page - STMicroelectronics |
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STP62NS04Z データシート(HTML) 3 Page - STMicroelectronics |
3 / 12 page STP62NS04Z Electrical ratings 3/12 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) Clamped V VGS Gate-source voltage Clamped V ID Drain current (continuous) at TC = 25°C 62 A ID Drain current (continuous) at TC=100°C 37.5 A IDG Drain gate current (continuous) ± 50 IGS Gate sourcecurrent (continuous) ± 50 IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 248 A PTOT Total dissipation at TC = 25°C 110 W Derating factor 0.74 W/°C dv/dt (2) 2. ISD ≤40A, di/dt ≤100A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Peak diode recovery voltage slope 8 V/ns EAS (3) 3. Starting TJ = 25 oC, I D = 20A, VDD = 20V Single Pulse Avalanche Energy 500 mJ VESD ESD (HBM - C = 100pF, R = 1.5 k Ω)8 V TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case Max 1.36 °C/W RthJA Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
同様の部品番号 - STP62NS04Z |
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同様の説明 - STP62NS04Z |
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