SI4955DY-T1-E3 datasheet(4/9 Pages) VISHAY

部品番号	SI4955DY-T1-E3

部品情報	Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs

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メーカー	VISHAY [Vishay Siliconix]

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Document Number: 72241

S-61006-Rev. C, 12-Jun-06

Vishay Siliconix

Si4955DY

CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C unless noted

Source-Drain Diode Forward Voltage

Threshold Voltage

VSD - Source-to-Drain Voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

TJ = 150 °C

30

10

1

TJ = 25 °C

TJ - Temperature (°C)

- 0.4

- 0.2

0.0

0.2

0.4

0.6

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

VGS - Gate-to-Source Voltage (V)

0.00

0.04

0.08

0.12

0.16

0.20

0

2468

10

ID = 5 A

ID = 2 A

0

20

30

10

15

Time (sec)

25

1

100

600

10

10- 1

10- 2

10- 3

5

Safe Operating Area

VDS - Drain-to-Source Voltage (V)

10

0.01

0.1

1

10

100

1

100

dc

0.1

P(t) = 10

P(t) = 1

P(t) = 0.1

P(t) = 0.01

P(t) = 0.001

P(t) = 0.0001

TA = 25 °C

Single Pulse

IDM Limited

ID(on)

Limited

rDS(on) Limited

BVDSS Limited

同様の部品番号 - SI4955DY-T1-E3

メーカー	部品番号	データシート	部品情報
VBsemi Electronics Co.,...	SI4955DY-T1-E3	1Mb / 9P	Dual P-Channel 30-V (D-S) MOSFET

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同様の説明 - SI4955DY-T1-E3

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