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BD241BFP データシート(PDF) 2 Page - STMicroelectronics |
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BD241BFP データシート(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 5.3 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEO Collector Cut-off Current (IB = 0) VCE = 60 V 0.3 mA ICES Collector Cut-off Current (VBE = 0) VCE = 80 V 0.2 mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 1 mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 30 mA 80 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 3 A IB = 0.6 A 1.2 V VBE(ON) ∗ Base-Emitter Voltage IC = 3 A VCE = 4 V 1.8 V hFE* DC Current Gain IC = 1 A VCE = 4 V IC = 3 A VCE = 4 V 25 10 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % For PNP types voltage and current values are negative. Safe Operating Area BD241BFP / BD242BFP 2/4 |
同様の部品番号 - BD241BFP |
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同様の説明 - BD241BFP |
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