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2N3442 データシート(PDF) 2 Page - ON Semiconductor

部品番号 2N3442
部品情報  High?뭁ower Industrial Transistors
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N3442 データシート(HTML) 2 Page - ON Semiconductor

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2N3442
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 200 mAdc, IB = 0)
VCEO(sus)
140
Vdc
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ICEO
200
mAdc
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
5.0
30
mAdc
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
5.0
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
20
7.5
70
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 2.0 Adc)
VCE(sat)
5.0
Vdc
Base−Emitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)
VBE(on)
5.7
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)
fT
80
kHz
Small−Signal Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
12
72
3. Pulse Test: Pulse Width = 300
ms, Duty Cycle v 2.0%.
4. fT = |hfe| • ftest
1.0
0
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
0.8
0.6
0.4
0.2


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