2N4921G datasheet(3/6 Pages) ONSEMI

部品番号	2N4921G

部品情報	Medium?뭁ower Plastic NPN Silicon Transistors

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Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.

Figure 2. Switching Time Equivalent Circuit

5.0

10

Figure 3. Turn−On Time

IC, COLLECTOR CURRENT (mA)

VCC = 30 V

IC/IB = 20

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.05

20

30

50 70 100

200

700 1000

VCC

SCOPE

RB

Cjd <<Ceb

−4.0 V

t1 ≤ 15 ns

100 < t2 ≤ 500 ms

t3 ≤ 15 ns

DUTY CYCLE ≈ 2.0%

Vin

RC

0.07

3.0

IC/IB = 10, UNLESS NOTED

VCC = 30 V

VCC = 60 V

VBE(off) = 2.0 V

VCC = 30 V

VBE(off) = 0

300

500

tr

td

t1

VBE(off)

APPROX 9.0 V

TURN−ON PULSE

t3

t2

Vin

APPROX

+11 V

Vin

TURN−OFF PULSE

APPROX

+11 V

RB and RC varied to

obtain desired

current levels

TJ = 25°C

TJ = 150°C

VCC = 60 V

同様の部品番号 - 2N4921G

メーカー	部品番号	データシート	部品情報
ON Semiconductor	2N4921G	150Kb / 6P	Medium-Power Plastic NPN Silicon Transistors December, 2013 ??Rev. 14
	2N4921G	198Kb / 6P	Medium-Power Plastic NPN Silicon Transistors January, 2017 ??Rev. 15
	2N4921G	150Kb / 6P	Medium-Power Plastic NPN Silicon Transistors December, 2013 ??Rev. 14
	2N4921G	198Kb / 6P	Medium-Power Plastic NPN Silicon Transistors January, 2017 ??Rev. 15

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同様の説明 - 2N4921G

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	2N4921G	150Kb / 6P	Medium-Power Plastic NPN Silicon Transistors December, 2013 ??Rev. 14

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