BDX53BFP datasheet(2/4 Pages) STMICROELECTRONICS

部品番号	BDX53BFP

部品情報	SILICON POWER DARLINGTON TRANSISTOR

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

4.3

70

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 80 V

0.2

mA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 40 V

0.5

mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

2mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

80

V

VCE(sat)

∗ Collector-emitter

Saturation Voltage

IC = 3 A

IB =12 mA

2

V

VBE(sat)

∗ Base-emitter

Saturation Voltage

IC = 3 A

IB =12 mA

2.5

V

hFE

∗

DC Current Gain

IC = 3 A

VCE = 3 V

750

VF

∗

Parallel Diode Forward

Voltage

IF = 3 A

IF = 8 A

1.8

2.5

V

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

BDX53BFP

2/4

同様の部品番号 - BDX53BFP

メーカー	部品番号	データシート	部品情報
Mospec Semiconductor	BDX53B	187Kb / 4P	POWER TRANSISTORS(8A.,45-100V,60W)
Savantic, Inc.	BDX53B	92Kb / 3P	Silicon NPN Power Transistors
Motorola, Inc	BDX53B	169Kb / 6P	Plastic Medium-Power Complementary Silicon Transistors
ON Semiconductor	BDX53B	106Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors November, 2007 - Rev. 13
ON Semiconductor	BDX53B	169Kb / 6P	DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS 1995 REV 7

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