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BDX53BFP データシート(PDF) 2 Page - STMicroelectronics |
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BDX53BFP データシート(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 4.3 70 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 80 V 0.2 mA ICEO Collector Cut-off Current (IB = 0) VCE = 40 V 0.5 mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 2mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 100 mA 80 V VCE(sat) ∗ Collector-emitter Saturation Voltage IC = 3 A IB =12 mA 2 V VBE(sat) ∗ Base-emitter Saturation Voltage IC = 3 A IB =12 mA 2.5 V hFE ∗ DC Current Gain IC = 3 A VCE = 3 V 750 VF ∗ Parallel Diode Forward Voltage IF = 3 A IF = 8 A 1.8 2.5 2.5 V V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area BDX53BFP 2/4 |
同様の部品番号 - BDX53BFP |
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同様の説明 - BDX53BFP |
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