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2SK2233 データシート(PDF) 1 Page - Toshiba Semiconductor |
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2SK2233 データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK2233 2002-07-31 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 –π−MOSV) 2SK2233 Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.022 Ω (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 60 V Drain−gate voltage (RGS = 20 kΩ) VDGR 60 V Gate−source voltage VGSS ±20 V DC (Note 1) ID 45 A Drain current Pulse (Note 1) IDP 180 A Drain power dissipation (Tc = 25°C) PD 100 W Single pulse avalanche energy (Note 2) EAS 246 mJ Avalanche current IAR 45 A Repetitive avalanche energy (Note 3) EAR 10 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 1.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 50 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 165 µH, RG = 25 Ω, IAR = 45 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) |
同様の部品番号 - 2SK2233_02 |
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同様の説明 - 2SK2233_02 |
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