ST4460FX datasheet(4/11 Pages) STMICROELECTRONICS

部品番号	ST4460FX

部品情報	High voltage fast-switching NPN Power transistor

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4 / 11 page

Electrical characteristics

ST4460FX

4/11

2

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE =0)

VCE = 1000V

VCE = 1000V;

TC= 125°C

100

500

µA

ICEO

Collector cut-off current

(IB =0)

VCE = 500V

250

µA

VCEO(sus)

(1)

Collector-emitter

sustaining voltage

(IB =0)

IC = 10mA

500

V

VEBO

Emitter-base voltage

(Ic =0)

IE = 10mA

9V

VCE(sat)

(1)

1.

Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %

Collector-emitter

saturation voltage

IC = 6A

IB = 1.2A

IC = 8A

IB = 1.6A

IC = 10A

IB = 2A

1

1.5

3

V

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 6A

IB = 1.2A

IC = 8A

IB = 1.6A

1.5

1.6

V

hFE

(1)

DC current gain

IC = 1.2A

VCE = 5V

IC = 6A

VCE = 5V

28

10

45

ts

tf

Inductive load

Storage time

Fall time

IC = 8A

IB1 = 1.6A

VBE(off) = -5V

RBB = 0.4Ω

VCL = 350V

L = 200

µH

1.5

55

2.3

100

µs

ns

ts

tf

Inductive load

Storage time

Fall time

IC = 8A

IB1 = 1.6A

VBE(off) = -5V

RBB = 0.4Ω

VCL = 350V

L = 200

µH

TC = 100°C

1.9

80

µs

ns

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